Magnetic thin oxide films, half-metallic systems (La0.7Sr0.3MnO3, Fe3O4)

Oxide electronics and spintronics will rely on the successful integration of materials into heterostructures providing the basic architecture of future applications. Understanding and predicting the physical properties of thin film stacking and their interfaces within such structures is crucial to any real device design. As a result a large part of our research is dedicated to understanding the fundamental physics of such thin film materials.

back